English | 2021 | ISBN: 1032106271 | 174 Pages | True PDF | 15.73 MB
This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.
This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
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